PART |
Description |
Maker |
SID1010M SID1K10CXM SID1010CM SID1010CXM SID1K10CM |
5PHI ROUND INFRARED LED Infrared LED Lamp
|
SANKEN[Sanken electric]
|
TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter Infrared LED GaA??s Infrared Emitter Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm 3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
MLED930 |
Infrared LED 3.68 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD. Toshiba Semiconductor
|
TLP1001A E006217 PLP1000A PLP1001A P1001A P100A TL |
THSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC THSHIBA光电断路器红外LED相机芯片 From old datasheet system TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TLN11907 TLN119F TLN119 |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation Toshiba Semiconductor
|
BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|